Preface, page 607, 
Full Text PDF

Porous Silicon - New Luminescent Material or Luminescent Defect?
M. Mizuta, page 609,  abstract   Full Text PDF
DOI: 10.12693/APhysPolA.84.609

Thermally Induced Intermixing of InGaAs/GaAs Single Quantum Wells
A. Kozanecki, W.P. Gillin and B.J. Sealy, page 621,  abstract   Full Text PDF
DOI: 10.12693/APhysPolA.84.621

Hydrostatic Pressure Studies of Asymmetric Double-Barrier Resonant Tunneling Diodes
R. Diniz, J. Smoliner, E. Gornik, T. Suski, U. Meiners and H. Brugger, page 625,  abstract   Full Text PDF
DOI: 10.12693/APhysPolA.84.625

Field Ionization of Shallow Acceptors
A. Dargys, S. Žurauskas and N. Žurauskienė, page 629,  abstract   Full Text PDF
DOI: 10.12693/APhysPolA.84.629

X-Ray Photoelectron Spectroscopy and X-Ray Diffraction Studies of Zn_1-xCo_xS Diluted Magnetic Semiconductor Crystals
K. Ławniczak-Jabłońska, Z. Gołacki, W. Paszkowicz, R.J. Iwanowski, L.-S. Johansson and M. Heinonen, page 633,  abstract   Full Text PDF
DOI: 10.12693/APhysPolA.84.633

Optical Study of an Asymmetric Double Quantum Well System: CdTe/CdMnTe
I. Lawrence, G. Feuilet, H. Tuffigo, C. Bodin, J. Cibert and W.W. Rühle, page 637,  abstract   Full Text PDF
DOI: 10.12693/APhysPolA.84.637

Magnetic Anisotropy in Pb_1-x-ySn_yMn_xTe Studied by Ferromagnetic Resonance
P.J.T. Eggenkamp, T. Story, C.H.W. Swüste, H.J.M. Swagten and W.J.M. de Jonge, page 641,  abstract   Full Text PDF
DOI: 10.12693/APhysPolA.84.641

Potential Fluctuations in HgSe:Fe,Ga - a Numerical Study
P. Sobkowicz, Z. Wilamowski and J. Kossut, page 645,  abstract   Full Text PDF
DOI: 10.12693/APhysPolA.84.645

Evidence of Γ-Free or Bound-to-Deep Acceptor Character of the Y-1.2 eV Deep Photoluminescence Line in n-type Ge-doped GaAs Derived from High Hydrostatic Pressure Experiments in Diamond Anvil Cell
J.E. Dmochowski, R.A. Stradling, A.D. Prins, D.J. Dunstan, A.R. Adams and H. Kukimoto, page 649,  abstract   Full Text PDF
DOI: 10.12693/APhysPolA.84.649

Transformation of Native Defects in GaAs under Ultrasonic Treatment
A. Mąkosa, T. Wosiński and Z. Witczak, page 653,  abstract   Full Text PDF
DOI: 10.12693/APhysPolA.84.653

Light-Controlled Transport in Doped Diluted Magnetic Semiconductors near Localization Boundary
P. Głód, T. Dietl, T. Wojtowicz, M. Sawicki and I. Miotkowski, page 657,  abstract   Full Text PDF
DOI: 10.12693/APhysPolA.84.657

Images of the Response Signal of a 2D Gas of Carriers to a Pulsed Beam of 3D Phonons
Cz. Jasiukiewicz, D. Lehmann and T. Paszkiewicz, page 661,  abstract   Full Text PDF
DOI: 10.12693/APhysPolA.84.661

Magnetic Susceptibility of Sn_1-xAu_xTe
M. Górska, J.R. Anderson, J.L. Peng and Z. Gołacki, page 665,  abstract   Full Text PDF
DOI: 10.12693/APhysPolA.84.665

Highly Compensated GaAs Crystal Obtained by Molecular CO Doping
R. Bożek, K.P. Korona, G. Nowak, D. Wasik, T. Słupiński and P. Kaczor, page 669,  abstract   Full Text PDF
DOI: 10.12693/APhysPolA.84.669

Deep Level Transient Spectroscopy Measurements of an Acceptor-like State of Metastable EL2 in GaAs and GaAsP
A. Babiński, A. Wysmołek and T. Słupiński, page 673,  abstract   Full Text PDF
DOI: 10.12693/APhysPolA.84.673

Light Induced Ordering of the EL2 Defects in the Metastable State
P. Trautman and J.M. Baranowski, page 677,  abstract   Full Text PDF
DOI: 10.12693/APhysPolA.84.677

Application-of Quasi-Forbidden Reflections for Determination of Composition of Pseudobinary Semiconductors
J. Bąk-Misiuk, W. Paszkowicz and J. Domagała, page 681,  abstract   Full Text PDF
DOI: 10.12693/APhysPolA.84.681

Tunneling in Double-Barrier Heterostructures - Comparison of Time-Dependent and Stationary Approach
P. Bała, R. Ryszewski and W. Bała, page 685,  abstract   Full Text PDF
DOI: 10.12693/APhysPolA.84.685

Study of Misfit Dislocations Profiles in ZnSe/GaAs Structures by Raman Scattering
W. Bała, M. Drozdowski and M. Kozielski, page 689,  abstract   Full Text PDF
DOI: 10.12693/APhysPolA.84.689

Kinetic Exchange in Diluted Magnetic Semiconductors of Wurtzite Structure
J. Blinowski and P. Kacman, page 693,  abstract   Full Text PDF
DOI: 10.12693/APhysPolA.84.693

Exchange Integrals in Hg_0.95Mn_0.05Se Obtained by the Wave Shape Analysis of Shubnikov-de Haas Oscillations
K. Dybko and J. Kossut, page 697,  abstract   Full Text PDF
DOI: 10.12693/APhysPolA.84.697

Electric Field Stimulated Emission of Electrons from Deep Traps in SiO₂
I. Strzałkowski, M. Marczewski, M. Kowalski and C. Jastrzębski, page 701,  abstract   Full Text PDF
DOI: 10.12693/APhysPolA.84.701

Magnetic Specific Heat of (Cd_{1-x-y}ZnyMnx)3As2}
H. Bednarski, J. Cisowski, D. Schmitt, J. Voiron, J.C. Portal and W. Lubczyński, page 705,  abstract   Full Text PDF
DOI: 10.12693/APhysPolA.84.705

Indirect Exchange in Band-Inverted Heterojunctions of IV-VI Semimagnetic Compounds
V.K. Dugaev, V.I. Litvinov and M. Oszwałdowski, page 709,  abstract   Full Text PDF
DOI: 10.12693/APhysPolA.84.709

Photoluminescence Properties of Porous Silicon Prepared by Electrochemical Etching of Si Epitaxial Layer
E. Nossarzewska-Orłowska and A. Brzozowski, page 713,  abstract   Full Text PDF
DOI: 10.12693/APhysPolA.84.713

Hot-Electron Effects in High-Resistivity InSb
S. Ašmontas, L. Subačius and G. Valušis, page 717,  abstract   Full Text PDF
DOI: 10.12693/APhysPolA.84.717

Photovoltaic Effect on PbTe p-n Junction in the Presence of Magnetic Field
Le Van Khoi, E. Grodzicka, B. Witkowska, T. Story and R.R. Gałązka, page 721,  abstract   Full Text PDF
DOI: 10.12693/APhysPolA.84.721

On the Symmetry of the Sulfur Pair-Related Defect in Silicon
M.T. Bennebroek, A. Zakrzewski, A.M. Frens and J. Schmidt, page 725,  abstract   Full Text PDF
DOI: 10.12693/APhysPolA.84.725

Concentration Anomalies of Properties in Pb_1-xGe_xTe Solid Solutions
E.I. Rogacheva, N.A. Sinelnik and O.N. Nashchekina, page 729,  abstract   Full Text PDF
DOI: 10.12693/APhysPolA.84.729

Defects of Non-Stoichiometry and Dynamic Stability of SnTe Crystal Lattice
E.I. Rogacheva, N.A. Sinelnik, O.N. Nashchekina, V.P. Popov and T.A. Lobkovskaya, page 733,  abstract   Full Text PDF
DOI: 10.12693/APhysPolA.84.733

Magnetoresistance of n-CdTe in the "Persistent" State
P. Kossacki and K. Karpierz, page 737,  abstract   Full Text PDF
DOI: 10.12693/APhysPolA.84.737

Pressure Dependence of the Schottky Barrier Heights in Al/AlGaAs Junctions
L. Dobaczewski, J.M. Langer and M. Missous, page 741,  abstract   Full Text PDF
DOI: 10.12693/APhysPolA.84.741

Magnetic Properties of Molecular Beam Epitaxy Grown High x Cd_1-xMn_xTe
M. Sawicki, P.A.J. De Groot, M.A. Brummell, G.J. Tomka, D.E. Ashenford and B. Lunn, page 745,  abstract   Full Text PDF
DOI: 10.12693/APhysPolA.84.745

Interband Absorption in InGaAs/GaAs Quantum Well at High Hydrostatic Pressure
T.P. Sosin, P. Perlin, W. Trzeciakowski and R. Tober, page 749,  abstract   Full Text PDF
DOI: 10.12693/APhysPolA.84.749

ZnS/ZnSe Superlattices under Pressure
I. Gorczyca and N.E. Christensen, page 753,  abstract   Full Text PDF
DOI: 10.12693/APhysPolA.84.753

Photo-ESR Study of the DX to Shallow Donor Conversion in Te Doped Al_xGa_1-xAs
M. Surma, Z.R. Żytkiewicz, K. Fronc, P. Stalinga and M. Godlewski, page 757,  abstract   Full Text PDF
DOI: 10.12693/APhysPolA.84.757

Visible Luminescence from Porous Silicon
W. Bała, F. Firszt, E. Nossarzewska-Orłowska, A. Brzozowski, B.A. Orłowski, B.J. Kowalski, E. Guziewicz, page 761,  abstract   Full Text PDF
DOI: 10.12693/APhysPolA.84.761

35×4 Substates of DX Centers in AlGaAs:Si
G. Ostermayer, G. Brunthaler, G. Stöger, W. Jantsch and Z. Wilamowski, page 765,  abstract   Full Text PDF
DOI: 10.12693/APhysPolA.84.765

Alloy Splitting of the Te-DX States in Al_xGa_1-xAs
G. Ostermayer, W. Jantsch, D. Dobosz, Z.R. Żytkiewicz and Z. Wilamowski, page 769,  abstract   Full Text PDF
DOI: 10.12693/APhysPolA.84.769

Electron Paramagnetic Resonance of Cr in PbTe
T. Story, Z. Wilamowski, E. Grodzicka, B. Witkowska and W. Dobrowolski, page 773,  abstract   Full Text PDF
DOI: 10.12693/APhysPolA.84.773

In Situ Monitoring of Electroepitaxial Growth of Thick AlGaAs Layers
Z.R. Żytkiewicz, page 777,  abstract   Full Text PDF
DOI: 10.12693/APhysPolA.84.777

Second Harmonic Generation in Spin-Glass Microstructures and Fabrication of Microstructures in IV-VI Epilayers
G. Grabecki, T. Dietl, Marek Cieplak, W. Plesiewicz, A. Lenard, T. Skośkiewicz, E. Kamińska, A. Piotrowska, R. Żarecka, G. Springholz and G. Bauer, page 781,  abstract   Full Text PDF
DOI: 10.12693/APhysPolA.84.781

Growth of Ternary and Quaternary ZnSe Compounds with Transition Metals by Chemical Vapor Transport
E. Janik, K. Grasza, A. Mycielski, J. Bąk-Misiuk and J. Kachniarz, page 785,  abstract   Full Text PDF
DOI: 10.12693/APhysPolA.84.785

X-Ray Topographic Investigation of Cellular Structure and its Relation to another Defects in Various Types of GaAs Single-Crystals
W. Wierzchowski and K. Mazur, page 789,  abstract   Full Text PDF
DOI: 10.12693/APhysPolA.84.789

Magnetization Relaxation in a Four-Level System
A.M. Witowski, page 795,  abstract   Full Text PDF
DOI: 10.12693/APhysPolA.84.795

Magnetization Relaxation in CdMnS
A.M. Witowski, Ch. Kutter, W. Mac and P. Wyder, page 798,  abstract   Full Text PDF
DOI: 10.12693/APhysPolA.84.798

Mechanism of Thermal Interaction of In with GaAs
A. Barcz, J. Adamczewska, J.M. Baranowski and S. Kwiatkowski, page 801,  abstract   Full Text PDF
DOI: 10.12693/APhysPolA.84.801

Shallow Ohmic Contact System to n-GaAs
E. Kamińska, A. Piotrowska, T.T. Piotrowski, A. Barcz, M. Guziewicz, J. Adamczewska and S. Kwiatkowski, page 804,  abstract   Full Text PDF
DOI: 10.12693/APhysPolA.84.804

On the Pinning of the Fermi Level by Germanium A₁^0/+ Deep Donor State in GaAs Codoped with Ge and Te
T. Słupiński, G. Nowak, J. Przybytek and R. Stępniewski, page 807,  abstract   Full Text PDF
DOI: 10.12693/APhysPolA.84.807

Effect of Interface on the Spinodal Decomposition of GaInPAs Solid Solutions during Liquid Phase Heteroepitaxy
J.M. Olchowik, page 812,  abstract   Full Text PDF
DOI: 10.12693/APhysPolA.84.812

Inelastic Electron Scattering in Double-Barrier Resonant Tunneling Structure Revealed with Photoexcitation
T. Figielski, A. Mąkosa, T. Wosiński, P.C. Harness and K.E. Singer, page 817,  abstract   Full Text PDF
DOI: 10.12693/APhysPolA.84.817

New Donor State of S Symmetry
S. Bednarek and J. Adamowski, page 820,  abstract   Full Text PDF
DOI: 10.12693/APhysPolA.84.820

Luminescence Quantum Efficiency of Mn²⁺ States in ZnSe:Mn as Studied by means of Photoacoustic Spectroscopy
H. Męczyńska, S. Łęgowski, W. Dąbrowska, M. Popielarski, Z. Ogielski and J. Zakrzewski, page 823,  abstract   Full Text PDF
DOI: 10.12693/APhysPolA.84.823

Molecular Beam Epitaxy of Al_xGa_1-xSb and Al_xGa_1-xAs: New Donor Doping Sources
L. Dobaczewski, M. Missous, K.E. Singer and Z.R. Żytkiewicz, page 826,  abstract   Full Text PDF
DOI: 10.12693/APhysPolA.84.826

On the Possible Origin of Large Value of Magnetic Anisotropy Constant in PbSnMnTe Mixed Crystals
A. Łusakowski, T. Story and R.R. Gałązka, page 829,  abstract   Full Text PDF
DOI: 10.12693/APhysPolA.84.829

Impurity Self-Screening
Z. Wilamowski and H. Przybylińska, page 832,  abstract   Full Text PDF
DOI: 10.12693/APhysPolA.84.832