ACTA

Molecular Beam Epitaxy of Al_xGa_1-xSb and Al_xGa_1-xAs: New Donor Doping Sources

L. Dobaczewski^a,b, M. Missous^a, K.E. Singer^a and Z.R. Żytkiewicz^a,b
^aDepartment of Electrical Engineering and Electronics, and Centre for Electronic Materials, UMIST, Manchester, M60 1QD, P.O. Box 88, United Kingdom
^bInstitute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland

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The first results obtained with the use of Ga₂S₃ and Ga₂Se₃ compounds as sources of donor elements for molecular beam epitaxy of Al_xGa_1-xSb (0 ≤ x ≤ 1) and Al_xGa_1-xAs (0 ≤ x ≤ 0.4) are reported. In GaAs free electron concentrations obtained when incorporating the donors from these sources can be easily controlled in the range of three orders of magnitude. For Al_xGa_1-xSb it was possible to compensate the high concentration of native acceptors and to obtain n-type of conductivity.

DOI: 10.12693/APhysPolA.84.826
PACS numbers: 68.55.Bd, 61.50.Cj, 71.55.Eq