Visible Luminescence from Porous Silicon |
| W. Bała, F. Firszt Institute of Physics, N. Copernicus University, Grudziądzka 5, 87-100 Toruń, Poland E. Nossarzewska-Orłowska, A. Brzozowski Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warszawa, Poland B.A. Orłowski, B.J. Kowalski, E. Guziewicz Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland |
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| This paper presents results of investigation of the temperature dependence of visible luminescence in porous silicon layers prepared by anodization in hydrofluoric acid. Luminescence spectra were measured in the temperature range between 40 K and 350 K. Room temperature reflectivity spectra were also measured in vacuum ultraviolet radiation range from 4 eV to 12 eV. |
| DOI: 10.12693/APhysPolA.84.761 PACS numbers: 78.66.-w |