Interband Absorption in InGaAs/GaAs Quantum Well at High Hydrostatic Pressure |
| T.P. Sosin, P. Perlin, W. Trzeciakowski High Pressure Research Center, Polish Academy of Sciences, Sokołowska 29, 01-142 Warszawa, Poland and R. Tober U.S. Army Laboratory Command, 2800 Powder Mill Road, Adelphi, Md 20783, USA |
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| The interband absorption of strained InGaAs/GaAs multiple quantum well was studied at room temperature for pressures up to 5.5 GPa. Three absorption lines were attributed to the excitonic transitions hh1-e1, lh1-e1 and hh2-e2. They were visible until pressure of about 5 GPa which is above the Γ-X crossover for this system. Pressure coefficients of the observed lines were compared with the literature data. The origin of broadening of the lines above Γ-X crossover is discussed. |
| DOI: 10.12693/APhysPolA.84.749 PACS numbers: 73.20.Dx |