Kinetic Exchange in Diluted Magnetic Semiconductors of Wurtzite Structure
J. Blinowski
Institute of Theoretical Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland

and P. Kacman
Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland
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Kinetic exchange between valence electrons and paramagnetic ions in diluted magnetic semiconductors of wurtzite structure is examined and compared with the results obtained previously for zinc-blende type diluted magnetic semiconductors. Two limiting electron configurations of the impurity ion, d5 and d1, are discussed. For the former, it is shown that the exchange constant anisotropy, experimentally observed in CdMnSe, results from the anisotropy of the hybridization matrix elements. In the latter case, apart from the similar anisotropy of the ferromagnetic exchange constant, additional, antiferromagnetic corrections should be expected, since for this particular symmetry the hybridization between the ground state of the ion and valence band becomes allowed.
DOI: 10.12693/APhysPolA.84.693
PACS numbers: 75.50.Pp, 75.30.-m