In Situ Monitoring of Electroepitaxial Growth of Thick AlGaAs Layers
Z.R. Żytkiewicz
Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland
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In situ growth monitoring technique has been used to analyse growth disturbances during the liquid phase electroepitaxial growth of thick AlGaAs layers. It allowed us to explain the nature of growth instability occurring at the end of the growth and affecting the maximum thickness of AlGaAs layers obtainable by liquid phase electroepitaxy.
DOI: 10.12693/APhysPolA.84.777
PACS numbers: 68.55.Df, 81.10.Dn