Hydrostatic Pressure Studies of Asymmetric Double-Barrier Resonant Tunneling Diodes |
| R. Diniz, J. Smoliner, E. Gornik Walter Schottky Institut, TU München, 8046 Garching, Am Coulombwall, Germany T. Suski UNIPRESS, Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warszawa, Poland U. Meiners and H. Brugger Daimler-Benz Research Centre, 7900 Ulm, PO Box 2360, Germany |
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| Tunneling processes in double-barrier GaAs/AlAs diodes with an incorporated AlGaAs pre-barrier were studied under hydrostatic pressure. The electrical characteristics resulting from a pre-barrier on the side of the emitter can be explained at 1 bar, solely by the Γ-profile: increasing pressure shows that the pre-barrier does not reduce the Γ-X tunneling. A pre-barrier on the collector side leads to charge buildup at the X minimum within the AlAs collector barrier. |
| DOI: 10.12693/APhysPolA.84.625 PACS numbers: 72.80.Ey, 73.40.Gk |