On the Pinning of the Fermi Level by Germanium A10/+ Deep Donor State in GaAs Codoped with Ge and Te |
| T. Słupiński, G. Nowak, J. Przybytek and R. Stępniewski Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland |
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| We present the possibility of GaAs:Ge,Te crystals growth from the melt (liquid encapsulated Czochralski method) with partially occupied, at ambient pressure, the A1 localized electronic state of GeGa impurity. In as-grown crystals the amphotericity of Ge and creation of defects (deep acceptor complexes, precipitates etc.) during cooling after growth limit the free electron concentration below the value necessary to populate the A10/+ level. Special annealing of the samples, which enlarges the free electron concentration, was used. The occupation of A10/+ level, at ambient pressure, was observed by pressure dependent Hall effect measurements. |
| DOI: 10.12693/APhysPolA.84.807 PACS numbers: 72.20.Jv |