Mechanism of Thermal Interaction of In with GaAs |
| A. Barcz, J. Adamczewska Institute of Electronic Technology, Al. Lotników 46, 02-668 Warszawa, Poland J.M. Baranowski Institute of Experimental Physics, University of Warsaw, Hoża 69, 00-681 Warszawa, Poland and S. Kwiatkowski Institute for Nuclear Problems, Hoża 69, 00-681 Warszawa, Poland |
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| General behavior of In/GaAs couple heat-treated at 570°C for 2 hours was studied with secondary-ion-mass spectrometry, scanning electron microscopy, Rutherford backscattering spectroscopy and Nomarski microscopy. It is shown that, besides the well-known InGaAs crystallites which epitaxially grow upon dissolution of the substrate, In interacts with the substrate dislocations to form In(Ga)As dendrites. The driving force for this process is presumably excess arsenic reported to be present in the vicinity of the individual dislocations. |
| DOI: 10.12693/APhysPolA.84.801 PACS numbers: 73.40.Ns |