ACTA

Photo-ESR Study of the DX to Shallow Donor Conversion in Te Doped Al_xGa_1-xAs

M. Surma^a, Z.R. Żytkiewicz^a, K. Fronc^a, P. Stalinga^b and M. Godlewski^a
^aInstitute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland
^bVan der Waals-Zeeman Lab., Amsterdam University, Valckenierstraat 65, 1018 XE Amsterdam, The Netherlands

Full Text PDF

Results of detailed electron spin resonance (ESR) study of Te doped Al_xGa_1-xAs epilayers with x = 0.41, 0.42, and 0.5 Al fractions are presented. It is shown that the ESR signal observed critically depends on cooling steps and that the shallow donor ESR signal can be observed prior to illumination. The first ESR study of AlGaAs layers with removed GaAs substrate are presented. The mechanism of the enhanced photosensitivity of the ESR signal is explained. It is found very paradoxical that the ESR signals decreases upon the illumination even though shallow donor concentration is increased.

DOI: 10.12693/APhysPolA.84.757
PACS numbers: 71.55.Eq, 76.30.Lh, 78.66.Fd