Photoluminescence Properties of Porous Silicon Prepared by Electrochemical Etching of Si Epitaxial Layer |
| E. Nossarzewska-Orłowska and A. Brzozowski Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warszawa, Poland |
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| The photoluminescence properties of porous layers prepared by anodization of p/p+ silicon epitaxial wafers are presented. The shift of the photoluminescence spectrum towards shorter wavelength due to the porosity increase and the experimental dependence of the photoluminescence maximum position on HF concentration during anodization are shown. Degradation of the photoluminescence intensity dependence on the storage time is described. |
| DOI: 10.12693/APhysPolA.84.713 PACS numbers: 78.55.Hx, 81.60.-j |