ACTA

35×4 Substates of DX Centers in AlGaAs:Si

G. Ostermayer^a, G. Brunthaler^b, G. Stöger^b, W. Jantsch^a and Z. Wilamowski^c
^aAbteilung Festkörperphysik, Johannes Kepler Universität, 4040 Linz, Austria
^bInstitut für Halbleiterphysik, Johannes Kepler Universität, 4040 Linz, Austria
^cInstitute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland

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The measured temperature dependent free carrier concentration in AlGaAs:Si samples is compared with a model calculation where we take the full 35 × 4 alloy statistics of the DX center and potential fluctuations into account. Within this statistics we are able to describe the electron capture by a single barrier E_B for all Al-configurations. We compare the alloy statistics with the simple 4 × 1 statistics.

DOI: 10.12693/APhysPolA.84.765
PACS numbers: 71.55.Eq, 72.80.Ey