Evidence of Γ-Free or Bound-to-Deep Acceptor Character of the Y-1.2 eV Deep Photoluminescence Line in n-type Ge-doped GaAs Derived from High Hydrostatic Pressure Experiments in Diamond Anvil Cell

J.E. Dmochowski Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland R.A. Stradling Blackett Laboratory and Semiconductors IRC, Imperial College of Science, Technology and Medicine, Prince Consort Road, London SW7 2BZ, UK A.D. Prins, D.J. Dunstan, A.R. Adams Physics Department, University of Surrey, Guildford, Surrey, GU2 5XH, UK and H. Kukimoto Imaging Science and Engineering Laboratory, Tokyo Institute of Technology, Nagatsuta, Midori-ku, Yokohama 227, Japan

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The dependence of the energy position of the deep defect-related photoluminescence line Y-1.2 eV in Ge-doped GaAs on high hydrostatic pressure is investigated using a Dunstan-like diamond anvil cell. The observation that the energy position of the line follows that of the Γ-conduction band minimum in the 1 bar-30 kbar pressure range demonstrates that the line has Γ-(free or shallow bound)-to-deep acceptor character. This fact confirms the deep-acceptor character of the deep defect, most likely a donor impurity-Ga vacancy complex, which contributes to the Y:-1.2 eV photoluminescence line.

DOI: 10.12693/APhysPolA.84.649 PACS numbers: 71.55.Eq