Electric Field Stimulated Emission of Electrons from Deep Traps in SiO2 |
| I. Strzałkowski, M. Marczewski, M. Kowalski and C. Jastrzębski Institute of Physics, Warsaw University of Technology, Koszykowa 75, 00-662 Warszawa, Poland |
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| An electric field induced electron tunneling emission from deep traps and an energy distribution of trap levels in VLSI grade SiO2 layers have been studied using a new isochronal - EFSE - technique. A broad spectrum with a density of trap states peak at about 1.9 eV was observed for the first time. The experiment proved the importance of an electron trap-to-band tunneling emission in SiO2. |
| DOI: 10.12693/APhysPolA.84.701 PACS numbers: 72.20.Jv, 73.40.Qv, 73.60.Hy |