Magnetoresistance of n-CdTe in the "Persistent" State
P. Kossacki and K. Karpierz
Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland
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In this paper we present results of measurements done on photoexcited carriers in high purity n-CdTe at liquid helium temperature. The photocurrent under near band gap illumination was measured, as well as the long term (≈ 15 hours) photoconductive decay after switching off the light. The transverse magnetoresistance was measured in high magnetic fields in two cases: 1) under external illumination, 2) in the "persistent" state after ≈ 15 h of photocurrent decay. It was shown that in high magnetic fields this magnetoresistance exhibits a quadratic dependence on magnetic field (Δρ/ρ ≈ B2) in both cases.
DOI: 10.12693/APhysPolA.84.737
PACS numbers: 72.40.+w, 72.80.Ey