Transformation of Native Defects in GaAs under Ultrasonic Treatment
A. Mąkosa, T. Wosiński
Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland

and Z. Witczak
High Pressure Research Center, Polish Academy of Sciences, Sokołowska 29, 01-142 Warszawa, Poland
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Effect of high-intensity ultrasonic vibration on the spectrum of deep electron traps in bulk GaAs has been studied giving rise to a discussion on microscopic structure of native defects associated with the traps.
DOI: 10.12693/APhysPolA.84.653
PACS numbers: 61.72.Ji, 62.80.+f, 71.55.Eq