Shallow Ohmic Contact System to n-GaAs |
| E. Kamińska, A. Piotrowska, T.T. Piotrowski, A. Barcz, M. Guziewicz, J. Adamczewska Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warszawa, Poland and S. Kwiatkowski Institute of Nuclear Studies, Hoża 69, 00-682 Warszawa, Poland |
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| Low resistance (Au)GeNi ohmic contacts to n-GaAs with smooth morphology and restricted penetration into the substrate have been fabricated. Rapid thermally nitrided tungsten has been demonstrated to be an effective capping layer during the contact processing. |
| DOI: 10.12693/APhysPolA.84.804 PACS numbers: 73.40.Ns |