Photovoltaic Effect on PbTe p-n Junction in the Presence of Magnetic Field
Le Van Khoi, E. Grodzicka, B. Witkowska, T. Story, and R.R. Gałązka
Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland
Full Text PDF
Photovoltaic spectra of PbTe p-n junction have been measured in the infrared spectral region in the temperature range of 8-260 K. The p-n junctions have been formed by cadmium diffusion into the p-type PbTe crystals. From the positions of the photovoltaic maxima the energy gap of the diode material has been determined. In the presence of a magnetic field up to 7 T, a pronounced oscillatory behavior of the photovoltage was observed in the Faraday and Voigt configurations. Experiments were performed as a function of the magnetic field intensity at a constant wavelength of the incident light. The energy of the interband magnetooptical transitions between the Landau levels in PbTe was determined and compared with the theoretical model of Adler, describing the energy band structure for the IV-VI compounds.
DOI: 10.12693/APhysPolA.84.721
PACS numbers: 71.25.Tn, 78.20.Ls, 72.80.Ga