Alloy Splitting of the Te-DX States in AlxGa1-xAs |
| G. Ostermayer, W. Jantsch Institut für Experimentalphysik, Johannes Kepler Universität, 4040 Linz, Austria D. Dobosz, Z.R. Żytkiewicz and Z. Wilamowski Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 00-668 Warszawa, Poland |
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| We report investigations of the Hall effect and conductivity of Te doped AlxGa1-xAs (x = 0.3). After illumination at low temperature, the conductivity decreases in two steps on warming. These steps are explained in terms of the two sets of energy levels associated with two types of Te-DX centers depending on the neighboring host cation (Ga or Al) which undergoes the 1attice relaxation. The observed persistent increase in mobility is also explained in terms of the two different capture barriers. |
| DOI: 10.12693/APhysPolA.84.769 PACS numbers: 71.55.Eq, 72.80.Ey |