Pressure Dependence of the Schottky Barrier Heights in Al/AlGaAs Junctions |
| L. Dobaczewski, J.M. Langer Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland and M. Missous University of Manchester, Institute of Science and Technology, P.O. Box 88, Manchester M60 1QD, The United Kingdom |
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| The influence of hydrostatic pressure up to 8 kbar on the barrier height of epitaxially MBE-grown Al on AlGaAs metal-semiconductor junctions is reported. The pressure change of the Schottky barrier on n-type AlGaAs is the same as that of the energy gap (for both direct and indirect-gap AlGaAs compositions), while for p-type AlGaAs it is negligible. This result is in direct conflict with a class of models of the Schottky barrier formation based on a concept of a semiconductor neutrality level alignment with the metal Fermi level. |
| DOI: 10.12693/APhysPolA.84.741 PACS numbers: 73.30.+y, 73.40.Kp, 73.20.Hb |