Field Ionization of Shallow Acceptors |
| A. Dargys, S. Žurauskas and N. Žurauskienė Semiconductor Physics Institute, A. Goštauto 11, 2600 Vilnius, Lithuania |
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| Experimental studies on hole tunneling from the substitutional boron impurity into degenerate valence band of silicon single crystals are presented. The results are interpreted within the framework of acceptor ground state quartet splitting into the Kramers doublet due to presence of random strains and electric field in the lattice. |
| DOI: 10.12693/APhysPolA.84.629 PACS numbers: 71.70.Ej, 73.20.Hb, 79.70.+q |