Acta Physica Polonica A | ||
Vol. 82 | No. 5 | November 1992 |
Proceedings of the XXI International School on Physics of Semiconducting Compounds, Jaszowiec, Poland, May 22-29, 1992, Part II |
Preface, page 723,
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Precipitates in Cd1-xNixSe Crystals Grown by the Bridgman Method
J. Kachniarz, E. Dynowska, S. Miotkowska, W. Paszkowicz, I. Miotkowski and A.K. Ramdas, page 725,
abstract
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DOI: 10.12693/APhysPolA.82.725
s-p-d-f Exchange Interactions in Mn and Eu Based IV-VI Semimagnetic Semiconductors
T. Dietl and G. Bauer, page 729,
abstract
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DOI: 10.12693/APhysPolA.82.729
Precision of the Hall Quantization in Naturally Occurring Two-Dimensional System - HgCdMnTe Bicrystals
G. Grabecki, A. Wittlin, T. Dietl, P.A.A. Teunissen, S.A.J. Wiegers and J.A.A.J. Perenboom, page 733,
abstract
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DOI: 10.12693/APhysPolA.82.733
Theory of Magnetotunnelling through Donors in the Quantum Well of Double-Barrier Resonant-Tunnelling Structures
T.M. Fromhold, F.W. Sheard and L. Eaves, page 737,
abstract
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DOI: 10.12693/APhysPolA.82.737
Changes of FIR Reflectivity of HgSe:Cr in a Magnetic Field
M. Hausenblas, P. Wyder, A.M. Witowski, A. Wittlin and A. Mycielski, page 741,
abstract
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DOI: 10.12693/APhysPolA.82.741
Effect of Surface Orientation of the Substrate on the Saturation State of Solution during Liquid Phase Heteroepitaxy
J.M. Olchowik, page 745,
abstract
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DOI: 10.12693/APhysPolA.82.745
Hopping Conductivity in (Zn,Fe)Se Intentionally Doped with Ag
A. Zaręba and M. Demianiuk, page 749,
abstract
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DOI: 10.12693/APhysPolA.82.749
Magnetization and Susceptibility of Cd1-xCoxSe
M. Górska, J.R. Anderson, S.M. Green, G. Kido and W. Giriat, page 753,
abstract
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DOI: 10.12693/APhysPolA.82.753
Composition Dependence of the Energy Gap in HgFeSe - Optical Verification
W. Szuszkiewicz, C. Julien, M. Bałkanski, K. Dybko and B. Witkowska, page 757,
abstract
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DOI: 10.12693/APhysPolA.82.757
Description of Electrical Characteristics of Semiconducting Compound-Insulator Interface on the Basis of the Model of Interface States Distributed in Energy and in Space
S. Kochowski, page 761,
abstract
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DOI: 10.12693/APhysPolA.82.761
On the High Compositional Uniformity of Thick GaAlAs Layers Grown by Liquid Phase Electroepitaxy
Z.R. Żytkiewicz and S. Miotkowska, page 765,
abstract
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DOI: 10.12693/APhysPolA.82.765
SrS:Eu and CaS:Eu Thin Films: Influence of Host Lattice on Kinetics of Europium Emission
K. Świątek, M. Godlewski, L. Niinistö and M. Leskelä, page 769,
abstract
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DOI: 10.12693/APhysPolA.82.769
On the Anharmonic Polaronic Model
J. Konior, page 773,
abstract
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DOI: 10.12693/APhysPolA.82.773
Electron Temperature in Semi-Insulating GaAs for Low Electric Fields
A. Zduniak, J. Łusakowski and G. Nowak, page 777,
abstract
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DOI: 10.12693/APhysPolA.82.777
Reflectivity Spectra of CdTe Implanted at Room and Liquid Nitrogen Temperature
E. Czarnecka-Such, A. Kisiel, A. Rodzik and Z. Gołacki, page 781,
abstract
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DOI: 10.12693/APhysPolA.82.781
Theoretical Study of Optical and XANES Spectra for CdTe within the k-dependent Matrix Element Approach
R. Markowski, J. Oleszkiewicz and A. Kisiel, page 785,
abstract
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DOI: 10.12693/APhysPolA.82.785
Valence Band Quantization in a Spherical Quantum Dot
R. Buczko, page 789,
abstract
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DOI: 10.12693/APhysPolA.82.789
Thermally Induced Nonlinear Refraction in Cd1-xMnxTe
L. Kowalczyk, A. Suchocki and R.R. Gałązka, page 793,
abstract
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DOI: 10.12693/APhysPolA.82.793
Energy Spectrum in Quantum Dots of Lead and Tin Chalcogenides Semiconducting Compounds
V.K. Dugaev, V.I. Litvinov, P.P. Petrov, O.A. Mironov, O.N. Nashchekina and M. Oszwałdowski, page 797,
abstract
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DOI: 10.12693/APhysPolA.82.797
A Role of Intermediate Charge State in the DX Center Photoionisation in AlxGa1-xAs:Se
P. Kaczor and Z.R. Żytkiewicz, page 801,
abstract
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DOI: 10.12693/APhysPolA.82.801
Interface Energy Spectrum of Real PbTe/SnTe Heterojunction
V.I. Litvinov and M. Oszwałdowski, page 805,
abstract
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DOI: 10.12693/APhysPolA.82.805
Electron Scattering and the Band Structure of Mixed Crystals Hg1-xFexSe
C. Skierbiszewski, Z. Wilamowski, T. Suski, J. Kossut and B. Witkowska, page 809,
abstract
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DOI: 10.12693/APhysPolA.82.809
Electric Field Enhanced Emission of Holes from the Double Donor Level of the EL2 Defect in GaAs
A. Mąkosa, T. Wosiński and W. Szkiełko, page 813,
abstract
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DOI: 10.12693/APhysPolA.82.813
Electron Spin Resonance Studies of Te Doped AlGaAs Epilayers
M. Surma, M. Godlewski and Z.R. Żytkiewicz, page 817,
abstract
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DOI: 10.12693/APhysPolA.82.817
Deep Defects in Low-Temperature GaAs
K.P. Korona, J. Muszalski, M. Kamińska and E.R. Weber, page 821,
abstract
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DOI: 10.12693/APhysPolA.82.821
Optical and Electrical Measurements of Low-Temperature InAlAs
K.P. Korona, A. Wysmołek, R. Bożek, M. Kamińska, J.M. Baranowski and E.R. Weber, page 825,
abstract
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DOI: 10.12693/APhysPolA.82.825
Defects Studies in As Grown and Neutron Irradiatcd Phosphorus Rich GaP
J. Jasiński , M. Palczewska, K. Korona, M. Kamińska, E.D. Bourret and G. Elliot, page 829,
abstract
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DOI: 10.12693/APhysPolA.82.829
Photovoltaic Effect with a Spectrally Dependent Sign in Type-II GaAlAs Heterostructure
M. Jeżewski, R. Teissier, F. Mollot and R. Planel, page 833,
abstract
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DOI: 10.12693/APhysPolA.82.833
Hydrostatic Pressure Spectroscopy of the Vanadium Luminescence in GaAs
A. Wysmołek, R. Bożek, A. Babiński and A.M. Hennel, page 837,
abstract
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DOI: 10.12693/APhysPolA.82.837
Hydrostatic-Pressure Deep Level Transient Spectroscopy Study of the Heteroantisite Antimony Level in GaAs
A. Babiński, J. Przybytek, M. Baj, P. Omling, L. Samuelson and T. Słupiński, page 841,
abstract
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DOI: 10.12693/APhysPolA.82.841
Reflectivity Study of HgSe1-xTex Crystals
B.J. Kowalski, K. Dybko, A. Lemańska and B.A. Orłowski, page 845,
abstract
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DOI: 10.12693/APhysPolA.82.845
Investigation of Phosphorus Release during Annealing of Au Contacts to InP
A. Piotrowska, E. Kamińska,, S. Kwiatkowski and A. Turos, page 849,
abstract
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DOI: 10.12693/APhysPolA.82.849
Atomic Scale Morphology of Thin Au(Zn)/GaAs Ohmic Contacts
E. Kamińska, A. Piotrowska, R. Żarecka, A. Barcz, E. Mizera and S. Kwiatkowski, page 853,
abstract
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DOI: 10.12693/APhysPolA.82.853
Dual Role of TiN Reaction Barrier in Gold Based Metallization to GaAs
A. Piotrowska, E. Kamińska, M. Guziewicz, J. Adamczewska,, S. Kwiatkowski and A. Turos, page 857,
abstract
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DOI: 10.12693/APhysPolA.82.857
Multiple-Band Envelope-Function Approximation for the Magnetooptical Anisotropy of Excitons in Strained Semimagnetic Semiconductors
D. Suisky, F. Neugebauer, J. Röseler and S. Rex, page 861,
abstract
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DOI: 10.12693/APhysPolA.82.861
Mechanism of Carrier Heating in High Electric Field Electroluminescence Devices
S. Dedulewicz and M. Godlewski, page 865,
abstract
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DOI: 10.12693/APhysPolA.82.865
On Concentration Dependence of Spin-Glass Freezing Temperature in Mn-Alloyed II-V Compounds
H. Bednarski and J. Cisowski, page 868,
abstract
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DOI: 10.12693/APhysPolA.82.868
Heterogeneous Amorphization of P and As Implanted GaAs at Low Temperatures
J. Krynicki, H. Rzewuski and A. Turos, page 871,
abstract
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DOI: 10.12693/APhysPolA.82.871
Numerical Studies of Magnetization Relaxation of Mn2+ in Zinc Blende Crystals
A.M. Witowski, page 876,
abstract
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DOI: 10.12693/APhysPolA.82.876
Transport and Magnetic Properties of PbTe:Cr and PbSnTe:Cr
T. Story, E. Grodzicka, B. Witkowska, J. Górecka and W. Dobrowolski, page 879,
abstract
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DOI: 10.12693/APhysPolA.82.879
A Model of the Electron Transport in a Quantum Wire with Contacts
T. Jungwirth, page 882,
abstract
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DOI: 10.12693/APhysPolA.82.882
Do the Mixed Crystals HgSeS Exhibit the One-Mode Behavior?
W. Szuszkiewicz, A.M. Witowski, C. Julien, M. Balkanski, K. Dybko, B. Witkowska and A. Mycielski, page 887,
abstract
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DOI: 10.12693/APhysPolA.82.887
Influence of Twinning on Local Electronic Properties of ZnSe
M. Balcerzyk, M. Grinberg and J. Szatkowski, page 890,
abstract
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DOI: 10.12693/APhysPolA.82.890
Photoelectronic Processes in ZnSe:Cu Single Crystals
F. Firszt, page 893,
abstract
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DOI: 10.12693/APhysPolA.82.893
Exciton Electroluminescence of ZnSe/ZnO Structures under Biaxial Stress
W. Bała, F. Firszt, S. Łęgowski and H. Męczyńska, page 896,
abstract
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DOI: 10.12693/APhysPolA.82.896
Monte Carlo Estimation of the Efficiency of the Three Center Auger Effect
A. Żakrzewski, page 899,
abstract
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DOI: 10.12693/APhysPolA.82.899
Exchange Interaction in ZnCrSe Semimagnetic Semiconductor
W. Mac, Nguyen The Khoi, A. Twardowski, J.A. Gaj and M. Demianiuk, page 902,
abstract
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DOI: 10.12693/APhysPolA.82.902
Formation of the DX State by Donors in AlxGa1-xAs - Experiment
L. Dobaczewski, P. Kaczor, M. Missous, Z.R. Żytkiewicz, D. Dobosz and A.R. Peakera, page 905,
abstract
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DOI: 10.12693/APhysPolA.82.905
Electrical Properties of an Acceptor-like State of Metastable EL2 in n-type GaAs under Uniaxial Stress
A. Babiński and A. Wysmołek, page 908,
abstract
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DOI: 10.12693/APhysPolA.82.908
"Excitonic" and Photoionization Absorption Spectra of Iron in III-V Materials
A. Wysmołek, R. Tryc, R. Bożek and A.M. Hennel, page 911,
abstract
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DOI: 10.12693/APhysPolA.82.911
Visible Light Emission from Porous Silicon
M. Bugajski, M. Wesołowski, W. Lewandowski, J. Ornoch and J. Kątcki, page 914,
abstract
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DOI: 10.12693/APhysPolA.82.914
A Unified Approach to Interface and Confined Bulk Optical Phonons in Quantum Wells and Superlattices
J. Röseler and D. Suisky, page 919,
abstract
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DOI: 10.12693/APhysPolA.82.919