Hydrostatic Pressure Spectroscopy of the Vanadium Luminescence in GaAs |
A. Wysmołek, R. Bożek, A. Babiński and A.M. Hennel Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland |
Full Text PDF |
We report luminescence measurements of the intracenter transition 3T2 → 3A2 of the V3+(3d2) charge state in semi-insulating GaAs under hydrostatic pressure up to 0.8 GPa at liquid helium temperature. The hydrostatic pressure coefficient of the zero-phonon line is found to be equal to 6.9 ± 0.2 meV/GPa. This result enables us to determine the Huang-Rhys parameter, which characterizes the coupling to the symmetric mode of vibration, as SA = 1.4 ± 0.1. Using this parameter, computer simulation leading to a reconstruction of the shape of both luminescence and corresponding absorption spectra were performed. |
DOI: 10.12693/APhysPolA.82.837 PACS numbers: 71.55.Eq, 78.55.Cr |