Electrical Properties of an Acceptor-like State of Metastable EL2 in n-type GaAs under Uniaxial Stress
A. Babiński and A. Wysmołek
Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland
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The electrical resistivity and deep level transient spectroscopy measurements of n-type GaAs under uniaxial stress for [100] and [111] directions at low temperatures are presented. After the transformation of EL2 to its metastable state the stress induced strong anisotropy in the increase in resistivity was observed. The observed splitting of the acceptor-like state of metastable EL2 implies the trigonal symmetry of that defect.
DOI: 10.12693/APhysPolA.82.908
PACS numbers: 71.55.Eq, 72.20.Fr, 72.80.Ey