Atomic Scale Morphology of Thin Au(Zn)/GaAs Ohmic Contacts
E. Kamińska, A. Piotrowska, R. Żarecka, A. Barcz
Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warszawa, Poland

E. Mizera
Institute of Physics, Polish Academy of Sciences Al. Lotników 32/46, 02-668 Warszawa, Poland

and S. Kwiatkowski
Institute of Nuclear Studies, Hoża 69, 00-682 Warszawa, Poland
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Very thin Au(Zn) contacts to p-GaAs were studied by means of transmission electron microscopy and secondary ion mass spectrometry. It was found that such contacts when cap annealed became ohmic, even though the reaction between the metallization and GaAs is confined to a very close vicinity of the interface.
DOI: 10.12693/APhysPolA.82.853
PACS numbers: 73.40.Ns