Investigation of Phosphorus Release during Annealing of Au Contacts to InP
A. Piotrowska, E. Kamińska
Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warszawa, Poland

S. Kwiatkowski and A. Turos
Institute of Nuclear Studies, Hoża 69, 00-682 Warszawa, Poland
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The analysis of phosphorus release from Au/InP contacts heat treated at temperature from the range 360-480°C showed that P evaporation accompanies any stage of contact reaction. The use of encapsulating layer during contact annealing suppresses the loss of phosphorus and changes the kinetics of thermally activated interfacial reaction.
DOI: 10.12693/APhysPolA.82.849
PACS numbers: 73.40.Ns