Energy Spectrum in Quantum Dots of Lead and Tin Chalcogenides Semiconducting Compounds
V.K. Dugaev, V.I. Litvinov, P.P. Petrov
Chernovtsy Department of the Institute of Materials Science Problems, Ukrainian Academy of Sciences, I. Wilde 5, 274001 Chernovtsy, Ukraine

O.A. Mironov, O.N. Nashchekina
Institute of Radiophysics and Electronics, Ukrainian Academy of Sciences, Acad. Proskura 12, 310085 Kharkov, Ukraine

and M. Oszwałdowski
Technical University of Poznań, Piotrowo 3, 60-965 Poznań, Poland
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The energy spectrum of a quantum dot made from IV-VI narrow gap semiconductors is studied. The calculations of the energy levels as functions of the dot radius are performed. When the anisotropy of the bare energy spectrum is strong, the energy levels are calculated using Fal'kovskii's adiabatic approximation for multiband systems. When the quantum dot material has an inverted band gap with respect to the host, the low-energy states within the fundamental gap are shown to arise.
DOI: 10.12693/APhysPolA.82.797
PACS numbers: 71.50.+t, 71.90.+q