Deep Defects in Low-Temperature GaAs
K.P. Korona, J. Muszalski, M. Kamińska
Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland

and E.R. Weber
University of California, Berkeley, CA 94720, USA
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Conductivity of GaAs layers grown by molecular beam epitaxy at low substrate temperature (190-200°C) and then annealed at few different temperatures (between 300 and 600°C) were studied. It was confirmed that electron transport is due to hopping between arsenic antisite defects. Parameters describing hopping conductivity and their dependence on temperature of annealing are discussed. Other deep defects with activation energies of 0.105, 0.30, 0.31, 0.47, 0.55 eV were found using photoinduced current transient spectroscopy measurements.
DOI: 10.12693/APhysPolA.82.821
PACS numbers: 71.55.-i, 72.80.Ey