Hydrostatic-Pressure Deep Level Transient Spectroscopy Study of the Heteroantisite Antimony Level in GaAs
A. Babiński, J. Przybytek, M. Baj
Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland

P. Omling, L. Samuelson
Department of Solid State Physics, University of Lund, Box 118, 221 00 Lund, Sweden

and T. Słupiński
Laboratory of Crystal Growth Physics, Przyokopowa 28, 01-208 Warszawa, Poland
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We present some preliminary results of the first hydrostatic-pressure study of the electronic level related to the Sb-heteroantisite defect in GaAs. We studied two kinds of n-type GaAs samples doped with antimony: bulk samples grown by liquid encapsulated Czochralski method and thin layers grown by metalorganic chemical vapour deposition technique. We found strongly nonlinear pressure dependence of the activation energy of the emission rate for the level. Moreover, the results obtained for the bulk material were fairly different from those obtained for thin metalorganic chemical vapour deposition layers. The possible explanation of this difference is presented.
DOI: 10.12693/APhysPolA.82.841
PACS numbers: 71.55.Eq, 62.50.-p