Mechanism of Carrier Heating in High Electric Field Electroluminescence Devices
S. Dedulewicz and M. Godlewski
Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland
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The mechanism of carrier heating in ZnS-based electroluminescence devices is discussed. We show that carrier acceleration by an applied electric field is at 300 K not a loss-free (ballistic carriers) process. Even for large carrier energies (about 2.5 eV) inelastic scattering on polar optical phonons dominates over elastic scattering on acoustic phonons and ionized impurities.
DOI: 10.12693/APhysPolA.82.865
PACS numbers: 72.10.-d, 78.60.Fi