Description of Electrical Characteristics of Semiconducting Compound-Insulator Interface on the Basis of the Model of Interface States Distributed in Energy and in Space
S. Kochowski
Institute of Physics, Technical University of Silesia, ul.Krzywoustego 2, 44-100 Gliwice, Poland
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The calculation results of the influence of interface state parameters on capacitance-voltage and conductance-voltage characteristics of n-GaAs metal insulator semiconductor structures are presented. The U-shaped distribution in the energy dimension and Gaussian-like distribution in the space dimension for insulator-semiconductor interface states are assumed.
DOI: 10.12693/APhysPolA.82.761
PACS numbers: 72.80.Ey, 73.20.-r, 73.40.Qv