Formation of the DX State by Donors in AlxGa1-xAs - Experiment
L. Dobaczewskia,b, P. Kaczorb, M. Missousa, Z.R. ┼╗ytkiewiczb, D. Doboszb and A.R. Peakera
aCentre for Electronic Materials, UMIST, Manchester M60 1QD, P.O. Box 88, Great Britain
bInstitute of Physics, Polish Academy of Sciences, Al. Lotnik├│w 32/46, 00-668 Warszawa, Poland
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A high-resolution Laplace-transform deep level transient spectroscopy was used to study electron emission from the DX centres related to group IV and VI donor elements in AlGaAs. This provides the experimental evidence that substitutional-interstitial atom motion is responsible for DX behaviour and for the associated metastability effects.
DOI: 10.12693/APhysPolA.82.905
PACS numbers: 71.38.+i, 71.55.Eq, 78.50.Ge