Defects Studies in As Grown and Neutron Irradiatcd Phosphorus Rich GaP
J. Jasińskia, M. Palczewskab, K. Koronaa, M. Kamińskaa, E.D. Bourretc and G. Elliotd
aInstitute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland
bInstitute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warszawa, Poland
cLawrence Berkeley Laboratory, Berkeley, CA 94720 USA
dHewlett Packard, San Jose, CA 95131 USA
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Semi-insulating, p- and n-type liquid encapsulated Czochralski grown phosphorus rich GaP crystals before and alter neutron irradiation were studied. EPR measurements proved that the phosphorus antisite defect PGa introduced by neutron irradiation was exactly the same as in as grown materials, i.e. surrounded by four substitutional phosphorus atoms. In neutron irradiated crystals EPR showed also a signal, similar to the one found in plastically deformed GaAs and GaP. The concentrations of PGa and of the other defect were estimated to be of the same order of magnitude. Two absorption bands at 0.81 and 1.12 eV were found for irradiated materials. The temperature dependence of resistivity indicated hopping as the mechanism of conduction in samples irradiated with doses higher than 4 × 1016 cm-2.
DOI: 10.12693/APhysPolA.82.829
PACS numbers: 71.55.Eq, 78.50.Ge, 76.30.Mi