Photovoltaic Effect with a Spectrally Dependent Sign in Type-II GaAlAs Heterostructure
M. Jeżewski
Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland

R. Teissier, F. Mollot and R. Planel
Laboratoire de Microstructures et de Microelectronique, CNRS, 196, Av. H. Ravera, 92220 Bagneux, France
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An asymmetric n-i-n like-II GaAs/GaAlAs/AlAs quantum heterostructure was designed and fabricated in order to observe a static photovoltage with a spectrally dependent sign. This photovoltage is associated with a light induced spatial separation of electrons and holes within selected regions of the structure. The observed photovoltage spectrum is compared with luminescence and luminescence excitation results.
DOI: 10.12693/APhysPolA.82.833
PACS numbers: 78.55.Cr, 72.40.+w, 72.20.Jv