On the High Compositional Uniformity of Thick GaAlAs Layers Grown by Liquid Phase Electroepitaxy
Z.R. Żytkiewicz and S. Miotkowska
Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland
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The results of electroepitaxial growth of thick GaAlAs layers on GaAs substrates are presented. It is experimentally proven that effective convective mixing of the solution volume results in the compositional uniformity of GaAlAs layers, even in spite of the high compositional non-uniformity of the material supplying the solutes (Al, As) to the solution during the growth of the layers. For the first time this allowed us to grow uniform GaAlAs layers with thicknesses up to 200-300 μm in a wide composition range from a small (5 g) amount of solution.
DOI: 10.12693/APhysPolA.82.765
PACS numbers: 68.55.Df, 81.10.Dn