Optical and Electrical Measurements of Low-Temperature InAlAs
K.P. Korona, A. Wysmołek, R. Bożek, M. Kamińska, J.M. Baranowski
Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland

and E.R. Weber
University of California, Berkeley, CA 94720, USA
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Photoluminescence, photocurrent, thermally stimulated current and photoinduced current transient spectroscopy measurements done on molecular beam epitaxy In0.52Al0.48As layer, lattice matched to InP are reported. The investigated layers were grown on semi-insulating InP wafers, at temperature range from 215 to 450°C. It was found that the Fermi level was pinned to a dominant midgap center (most likely similar to EL2 center). Moreover, there were at least 7 other defects but with much smaller concentrations. Their activation energies were equal to 0.076, 0.11, 0.185, 0.295, 0.32 and 0.40 eV. The layers exhibited a very low luminescence and a small photocurrent.
DOI: 10.12693/APhysPolA.82.825
PACS numbers: 71.55.Eq, 73.60.Br, 78.55.Cr