Dual Role of TiN Reaction Barrier in Gold Based Metallization to GaAs
A. Piotrowska, E. Kamińska, M. Guziewicz, J. Adamczewska
Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warszawa, Poland

S. Kwiatkowski and A. Turos
Institute of Nuclear Studies, Hoża 69, 00-682 Warszawa, Poland
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Reactively sputtered TiN films were evaluated as annealing cap improving the formation of Au(Zn) ohmic contact and as antidiffusion barrier protecting contact metallization and underlying GaAs against reaction with Au overlayers.
DOI: 10.12693/APhysPolA.82.857
PACS numbers: 73.40.Ns