Preface 
page 167, Full Text PDF

Semiconductor Ferromagnetic Structures
T. Story, page 171,  abstract   Full Text PDF
DOI: 10.12693/APhysPolA.98.171

Application of GaN Pressure Grown Crystals for Epitaxy of GaN-Based Structures
I. Grzegory, page 183,  abstract   Full Text PDF
DOI: 10.12693/APhysPolA.98.183

Polarization Induced Effects in AlGaN/GaN Heterostructures
O. Ambacher, page 195  abstract   Full Text PDF
DOI: 10.12693/APhysPolA.98.195

Diluted Magnetic III-V Semiconductors
A. Twardowski, page 203,  abstract   Full Text PDF
DOI: 10.12693/APhysPolA.98.203

2D Electron Gas in Non-Uniform Magnetic Fields
B.L. Gallagher, V. Kubrak, A.W. Rushforth, A.C. Neumann, K.W. Edmonds, P.C. Main, M. Henini, C.H. Marrows, B.J. Hickey, S. Thoms and D.E. Dahlberg, page 217,  abstract   Full Text PDF
DOI: 10.12693/APhysPolA.98.217

Hydrogen and its Complexes in Silicon
L. Dobaczewski, K. Bonde Nielsen, K. Gosciński and O. Andersen, page 231,  abstract   Full Text PDF
DOI: 10.12693/APhysPolA.98.231

High-Pressure Studies of Semiconductors in the Far-Infrared: Donor States in Quasi-2D
B.A. Weinstein, J.G. Tischler, R.J. Chen, H.A. Nickel, B.D. McCombe, A.B. Dzyubenko and A. Sivachenko, page 241,  abstract   Full Text PDF
DOI: 10.12693/APhysPolA.98.241

Self-Assembled Parallel Mesoscopic Pb Wires on Vicinal Si(111)
M. Jalochowski, page 259,  abstract   Full Text PDF
DOI: 10.12693/APhysPolA.98.259

Detection of Single Submillimeter-Wave Photons Using Quantum Dots
S. Komiyama, O. Astafiev, V. Antonov and T. Kutsuwa, page 271,  abstract   Full Text PDF
DOI: 10.12693/APhysPolA.98.271

Electronic Properties of InAs/GaAs Self-Assembled Quantum Dot Structures and Devices Studied by Photocurrent Spectroscopy
D.J. Mowbray, P.W. Fry, M.S. Skolnick, I.E. Itskevich, L. Harris, A.D. Ashmore, J.J. Finley, L.R. Wilson, K.L. Schumacher, J.A. Barker, E.P. O'Reilly, M. Al-Khafaji, A.G. Cullis, M. Hopkinson, J.C. Clark and G. Hill, page 279,  abstract   Full Text PDF
DOI: 10.12693/APhysPolA.98.279

Stimulated Scattering of Microcavity Polaritons
J. Bloch, P. Senellart, V. Thierry-Mieg and J.Y. Marzin, page 295,  abstract   Full Text PDF
DOI: 10.12693/APhysPolA.98.295

Breakdown of Rotational Symmetry at Semiconductor Interfaces: a Microscopic Description of Valence Subband Mixing
S. Cortez, O. Krebs and P. Voisin, page 303,  abstract   Full Text PDF
DOI: 10.12693/APhysPolA.98.303