Preface
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Half of the Century Story of Semiconductors at the Institute of Physics and in Jaszowiec
T. Dietl, page 567  abstract   How to cite
DOI: 10.12693/APhysPolA.142.567

History of the ``Jaszowiec'' Conference
J.M. Baranowski, page 573  abstract   How to cite
DOI: 10.12693/APhysPolA.142.573

50 Years of Compounds Semiconductors at the Institute of Electron Technology, Warsaw
A. Piotrowska, E. Kamińska, M. Bugajski, page 575  abstract   How to cite
DOI: 10.12693/APhysPolA.142.575

``Physics is the Most Important'' - Leonard Sosnowski
S. Porowski, page 594  abstract   How to cite
DOI: 10.12693/APhysPolA.142.594

Contribution of the Institute of High Pressure Physics PAS (UNIPRESS) to Semiconductor Physics and Technology
I. Grzegory, page 597  abstract   How to cite
DOI: 10.12693/APhysPolA.142.597

Optical Properties of CuNiO₂ Thin Films
I.P. Koziarskyi, E.V. Maistruk, D.P. Koziarskyi, page 607  abstract   How to cite
DOI: 10.12693/APhysPolA.142.607

The Radial Effect for E1 and E3 Deep Traps Concentration in n-GaN Layers
P. Kruszewski, J. Plesiewicz, P. Prystawko, E. Grzanka, L. Marona, page 611  abstract   How to cite
DOI: 10.12693/APhysPolA.142.611

Electrical Properties of the n-NiS₂/n-CdTe Isotype Heterojunction Fabricated by Spray Pyrolysis
I.G. Orletskyi, M.I. Ilashchuk, E.V. Maistruk, I.P. Koziarskyi, D.P. Koziarskyi, page 615  abstract   How to cite
DOI: 10.12693/APhysPolA.142.615

Low Frequency Noise Properties of InAs/GaSb Superlattice
Ł. Ciura, P. Śliż, D. Jarosz, P. Krzemiński, M. Ruszała, M. Marchewka, page 621  abstract   How to cite
DOI: 10.12693/APhysPolA.142.621

Optical and Electrical Properties of CuO Thin Films by Spray Pyrolysis Method
S.I. Kuryshchuk, I.G. Orletskii, O.V. Shyrokov, D.V. Myroniuk, M.M. Solovan, page 625  abstract   How to cite
DOI: 10.12693/APhysPolA.142.625

Structural, Magnetic and Electrical Properties of Nd³⁺-Doped PbWO₄ Ceramic Materials
B. Sawicki, E. Tomaszewicz, T. Groń, M. Oboz, P. Zajdel, I. Gruszka, A. Guzik, P. Urbanowicz, page 629  abstract   How to cite
DOI: 10.12693/APhysPolA.142.629

Electrical Properties of Yb_2-xV_xO_3+x Nanomaterials Obtained Mechanochemically from Yb₂O₃ and V₂O₅ Oxides
B. Sawicki, M. Piz, E. Filipek, T. Groń, P. Urbanowicz, H. Duda, A.Z. Szeremeta, S. Pawlus, page 637  abstract   How to cite
DOI: 10.12693/APhysPolA.142.637

Structure, Optical and Photocatalytic Properties of ZnO Nanostructures Grown on Ag-Coated Si Substrates
V. Karpyna, L. Myroniuk, O. Bykov, D. Myroniuk, O. Kolomys, V. Strelchuk, L. Petrosian, A. Ievtushenko, page 644  abstract   How to cite
DOI: 10.12693/APhysPolA.142.644

The Biological Activity of ZnO Nanostructures Doped by Mg and Co
L. Myroniuk, D. Myroniuk, V. Karpyna, O. Bykov, I. Garmasheva, O. Povnitsa, L. Artiukh, K. Naumenko, S. Zahorodnia, A. Ievtushenko, page 651  abstract   How to cite
DOI: 10.12693/APhysPolA.142.651

Low Temperature Weak Anti-Localization Effect in the GeTe and SnTe Epitaxial Layers
A. Khaliq, P. Dziawa, R. Minikaev, M. Arciszewska, A. Avdonin, B. Brodowska, L. Kilański, page 657  abstract   How to cite
DOI: 10.12693/APhysPolA.142.657

Efficient Emission in the Telecom Range from Quantum Dots Embedded in Photonic Structures Fabricated by Focused Ion Beam Milling
M. Jaworski, A. Chudzyńska, P. Mrowiński, G. Sęk, page 662  abstract   How to cite
DOI: 10.12693/APhysPolA.142.662

Surface Plasmon Interference Device as a Source of Near-Field Power for Photoluminescence
M. Kvapil, T. Šikola, V. Křápek, page 668  abstract   How to cite
DOI: 10.12693/APhysPolA.142.668