50 Years of Compounds Semiconductors at the Institute of Electron Technology, Warsaw

A. Piotrowskaa, E. Kamińskab, M. Bugajskia aŁukasiewicz Research Network, Institute of Microelectronics and Photonics, al. Lotników 32/46, 02-668 Warsaw, Poland bInstitute of High Pressure Physics, Polish Academy of Sciences, al. Prymasa Tysiąclecia 98, 01-142 Warsaw, Poland

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In 2022, we are celebrating the 50th anniversary of the ``Jaszowiec'' International School & Conference on the Physics of Semiconductors. One of the highlights of this anniversary was the reminiscence session at the Jaszowiec 2022 meeting, recalling the most important achievements in the field of semiconductor physics and technology in the institutions organising the Conference. This paper aims to highlight the accomplishments of the Institute of Electron Technology, Warsaw, with particular emphasis on II-VI and III-V compounds and their application in electronic and optoelectronic devices. Specifically, the review covers narrow-gap HgCdTe for galvanomagnetic devices, GaAs-, GaP-, InP-, and GaSb-based materials for optoelectronics and photonics, SiC and GaN for radio-frequency and high-power electronics, and finally ZnO and InGaZnO for transparent electronics and sensors. Research results on device physics, material development, device design, and processing are presented.

DOI:10.12693/APhysPolA.142.575 topics: ohmic contacts, galvanomagnetic devices, electron devices, semiconductor lasers