Electrical Properties of the n-NiS2/n-CdTe Isotype Heterojunction Fabricated by Spray Pyrolysis |
| I.G. Orletskyi, M.I. Ilashchuk, E.V. Maistruk, I.P. Koziarskyi, D.P. Koziarskyi
Department of Electronics and Power Engineering, Yuriy Fedkovych Chernivtsi National University, Kotsubynsky st. 2, 58002 Chernivtsi, Ukraine |
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| The conditions for the fabrication of n-NiS2/n-CdTe isotype heterojunctions with diode properties by spray pyrolysis of n-NiS2 thin films on n-CdTe crystalline substrates have been studied. The temperature dependence of the current-voltage characteristics is analyzed, and the mechanisms of the current generation at the heterojunction at forward and reverse voltages are determined. Based on the analysis of the capacitance-voltage characteristics, a model of a double Schottky diode for the studied heterojunction is presented, which well describes the observed electrophysical phenomena. |
DOI:10.12693/APhysPolA.142.615 topics: NiS2, spray pyrolysis, heterojunction, energy diagram |