Low Frequency Noise Properties of InAs/GaSb Superlattice |
| Ł. Ciuraa, P. Śliżb, D. Jaroszb, c, P. Krzemińskib, M. Ruszałab, M. Marchewkab
aRzeszow University of Technology, W. Pola 2, 35-395 Rzeszow, Poland bUniversity of Rzeszow, Institute of Materials Engineering, Center for Microelectronics and Nanotechnology, al. Rejtana 16c, 35-959 Rzeszow, Poland cInternational Research Centre Magtop, Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland |
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| The paper reports 1/f noise properties of InAs/GaSb superlattice as a function of voltage bias and temperature. Noise measurements were compared with standard transport characteristics: mobility and carrier concentration. Interestingly, while these standard characteristics of the two samples are comparable, the 1/f noise is substantially different. The results suggest that low-frequency noise is a more sensitive electronic transport characterization tool than standard techniques based on average current/voltage analysis. |
DOI:10.12693/APhysPolA.142.621 topics: 1/f noise, noise measurements, InAs/GaSb superlattice |