Preface
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Pressure-Driven Phase Transitions in Bulk HfS₂
M. Grzeszczyk, J. Gawraczyński, T. Woźniak, J. Ibáñez, Z. Muhammad, W. Zhao, M.R. Molas, A. Babiński, page 95  abstract   Full Text PDF
DOI: 10.12693/APhysPolA.141.95

Voltage- and Frequency-Dependent Electrical Characteristics and Interface State Density of Ni/ZnO Schottky Diodes
S.M. Faraz, Z. Tajwar, Q. ul Wahab, A. Ulyashin, R. Yakimova, page 99  abstract   Full Text PDF
DOI: 10.12693/APhysPolA.141.99

AlGaN Composition Correction under Variable Ammonia and Pressure Conditions in MOVPE Reactor
K. Moszak, W. Olszewski, D. Pucicki, J. Serafińczuk, K. Startek, D. Hommel, page 105  abstract   Full Text PDF
DOI: 10.12693/APhysPolA.141.105

Inter- and Intralayer Excitonic Spectrum of MoSe₂/WSe₂ Heterostructure
K. Sadecka, page 110  abstract   Full Text PDF
DOI: 10.12693/APhysPolA.141.110

Properties of Thin MgO Films on 6H-SiC and GaN: Photoelectron Studies
R. Lewandków, M. Grodzicki, P. Mazur, A. Ciszewski, page 116  abstract   Full Text PDF
DOI: 10.12693/APhysPolA.141.116

Magnetic Properties of Heavy Ion Implanted Monocrystalline ZnO
J. Gosk, R. Puźniak, A. Lynnyk, page 123  abstract   Full Text PDF
DOI: 10.12693/APhysPolA.141.123

Biaxial Relaxation Coefficient in Group-III Nitride Quantum Wells and Thin Films
S.P. Lepkowski, Abdur-Rehman Anwar, page 130  abstract   Full Text PDF
DOI: 10.12693/APhysPolA.141.130

Low-Temperature Cathodoluminescence of Nitrogen-Doped ZnO Films Deposited at Low-Temperature by Atomic Layer Deposition
M. Sarwar, B.S. Witkowski, A Sulich, E. Guziewicz, page 135  abstract   Full Text PDF
DOI: 10.12693/APhysPolA.141.135

Macro Porous Structure Silicon Capacitive Sensor for Aqueous Methyl Alcohol
S.M. Gheewala, P.N. Patel, R. Dhavse, page 140  abstract   Full Text PDF
DOI: 10.12693/APhysPolA.141.140