AlGaN Composition Correction under Variable Ammonia and Pressure Conditions in MOVPE Reactor |
| K. Moszaka, b, W. Olszewskia, c, D. Pucickia, d, J. Serafińczuka, c, K. Starteka, b, D. Hommela, d
aŁukasiewicz Research Network -PORT Polish Center for Technology Development, Stabłowicka 147, 54-066 Wrocław, Poland bInstitute of Low Temperature and Structure Research, Polish Academy of Sciences W. Trzebiatowski Institute, Okólna 2, 50-422 Wrocław, Poland cInstitute of Experimental Physics, University of Wrocław, Maksa Borna 9, 50-204 Wrocław, Poland dDepartment of Nanometrology, Wrocław University of Science and Technology, Janiszewskiego 11/17, 50-372 Wrocław, Poland |
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| Growth characteristics of AlGaN layers in different conditions: pressure and ammonia flow were presented. The structures containing the AlN buffer and the AlGaN layer were grown by metalorganic vapor phase epitaxy. The goal was to find the growth conditions for AlGaN with stable 60% of aluminium and determine the aluminium concentration deviation while changing two parameters. Pressure showed bigger influence on aluminium incorporation, layer quality and surface roughness than ammonia. |
DOI:10.12693/APhysPolA.141.105 topics: MOVPE, AlGaN 60%, concentration adjustment, UV LED |