Low-Temperature Cathodoluminescence of Nitrogen-Doped ZnO Films Deposited at Low-Temperature by Atomic Layer Deposition |
| M. Sarwar, B.S. Witkowski, A Sulich, E. Guziewicz
Institute of Physics, Polish Academy of Sciences, Aleja Lotników 32/46, PL-02 668 Warsaw, Poland |
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| ZnO and ZnO:N films grown by atomic layer deposition and post-growth annealed were studied by scanning electron microscopy, low-temperature cathodoluminescence and X-ray diffraction. Low-temperature cathodoluminescence spectra reveal donor-related emission centered at 3.35 eV and acceptor-related emission centered at 3.31 eV. The cathodoluminescence maps recorded from the films cross-section clearly show the acceptor and donor-related emission coming from separate regions. The intensity of acceptor- and donor-related emission after annealing at different temperatures and media was studied. A comparison of the cathodoluminescence images, grain size and dislocation density indicates that the acceptor-related emission is not related to grain boundaries. |
DOI:10.12693/APhysPolA.141.135 topics: zinc oxide, nitrogen doped zinc oxide, acceptor doping, low-temperature cathodoluminescence |