Binding Energy of a Bound Polaron in a Quantum Well Wire
M. Bouhassounea, R. Charroura, M. Fliyoub, D. Briaa and A. Nougaouia
a Laboratoire de Dynamique et d'Optique des Matériaux, Faculté des Sciences, Université Mohamed 1er, Oujda, Morocco,
b Equipe de Physique du Solide, ENS, B.P. 5206 Benssouda, Fès, Morocco

Received: April 11, 2000

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Theoretical study of the binding energies of an off-center donor hydrogenic impurity in a cylindrical quantum well wires semiconductor is presented. Calculations are performed in the framework of the effective mass approximation using the variational approach. We describe the effect of the quantum confinement by an infinitely deep potential well and we take into consideration the interaction between the charge carrier (electron and ion) and the optical phonons (confined longitudinal optical and surface optical). Our results show that the impurity binding energy depends strongly on the spatial confinement, the impurity position and the polaronic corrections.
DOI: 10.12693/APhysPolA.98.111
PACS numbers: 71.38.+i, 73.20.Dx, 73.20.Hb, 73.20.Fz