Tunneling Magnetoresistance in Planar Ferromagnetic Junctions
M. Wilczyński and J. Barnaś
a Institute of Physics, Warsaw Technical University Koszykowa 75, 00-662 Warszawa, Poland
b Department of Physics, Adam Mickiewicz University, Umultowska 85, 61-614 Poznań, Poland
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Bias dependence of the tunnel magnetoresistance in simple planar ferromagnetic junctions is considered theoretically within the one-band model. The limit of sequential tunnelling in double junctions with a non-magnetic central electrode is studied as well. In this case tunnel magnetoresistance exists only when the spin relaxation time due to spin-flip scattering processes inside the central electrode is sufficiently long.
DOI: 10.12693/APhysPolA.97.443
PACS numbers: 72.15.Gd, 73.40.Gk, 75.70.-i