The Effect of Spin-Orbit Scattering on the Electrical Resistivity of Disordered Materials
B. Spisak and A. Paja
Department of Solid State Physics, Faculty of Physics and Nuclear Techniques, University of Mining and Metallurgy, Al. Mickiewicza 30, 30-059 Kraków, Poland
Received: April 26, 1999; revised version November 4, 1999
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The spin-orbit scattering of charge carriers is considered as an additional contribution to the potential scattering. The expressions for the effective cross-section and the relaxation time for disordered media are calculated. The results for the Coulomb screened potential are presented and compared with available experimental data.
DOI: 10.12693/APhysPolA.96.751
PACS numbers: 71.70.Ej, 72.15.Cz