Electron Spin Resonance Study of Thermal Defects in SrLaAlO4 and SrLaGaO4 High-Tc Substrates
R. Jabłoński, A. Gloubokov and A. Pajączkowska
aInstitute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warsaw, Poland
bInstitute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 00-668 Warsaw, Poland
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The effect of annealing SrLaAlO4 (SLA) and SrLaGaO4 (SLG) crystals in oxidizing and reducing atmospheres in the temperature range of 950°C-1300°C was investigated. Three kinds of anisotropic defects D1, D2, and E at the temperature range of 4-300 K were found. By diagonalization of orthorhombic spin-Hamiltonian parameters: |D|=0.0541(10) cm-1, |E|=0.0108(10) cm-1, g=0.883(5), and g=1.922(5) for D1 defects for SLG and SLA were calculated and they had the same values within the margin of error.
DOI: 10.12693/APhysPolA.92.169
PACS numbers: 76.30.-v, 61.72.Hh, 61.72.Ji