Initial Roughness and Relaxation behaviour of MBE Grown ZnSe/GaAs |
| B. Buda, O. Leifeld, S. Völlmeke, F. Schmilgus, D.J. As, D. Schikora and K. Lischka University of Paderborn, FB Physik, 33098 Paderborn, Germany |
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| We investigated the GaAs/ZnSe interface and the influence of the Ga2Se3 formation at the GaAs/ZnSe interface on the relaxation of the ZnSe epilayer using reflection high-energy electron diffraction, atomic force microscope, photoluminescence, and X-ray diffraction techniques. An improvement of the surface roughness due to the cleaning of the GaAs substrate with hydrogen excited in a plasma source and a higher critical thickness of GaAs(001)/ZnSe due to the suppression of Ga2Se3 at the surface was observed. |
| DOI: 10.12693/APhysPolA.90.997 PACS numbers: 68.55.-a |