Initial Roughness and Relaxation behaviour of MBE Grown ZnSe/GaAs
B. Buda, O. Leifeld, S. Völlmeke, F. Schmilgus, D.J. As, D. Schikora and K. Lischka
University of Paderborn, FB Physik, 33098 Paderborn, Germany
Full Text PDF
We investigated the GaAs/ZnSe interface and the influence of the Ga2Se3 formation at the GaAs/ZnSe interface on the relaxation of the ZnSe epilayer using reflection high-energy electron diffraction, atomic force microscope, photoluminescence, and X-ray diffraction techniques. An improvement of the surface roughness due to the cleaning of the GaAs substrate with hydrogen excited in a plasma source and a higher critical thickness of GaAs(001)/ZnSe due to the suppression of Ga2Se3 at the surface was observed.
DOI: 10.12693/APhysPolA.90.997
PACS numbers: 68.55.-a